Lecture 2: 11-11-2021¶
Location: D@ta
Time: 13:45 - 15:30
Goal of this lecture
At the end of this lecture the student should:
Understand the operation of modern short-channel MOS transistors
Know the meaning of the inversion coefficient as defined in the EKV model
Know the way in which the most important small-signal properties of a biased MOS stage depend on the geometry and the inversion coefficient
Be able to design (and verify) a biased (CS) MOS stage with a sufficiently large load drive capability
Poll¶
Topics¶
MOS EKV model
IC manyfacturers often provide BSIM model parameters for CMOS devices. BSIM models are optimized for simulation speed and stability. Many parameters of these models have no direct relation to underlying physical mechanisms.
The EKV model shows a strong relation with the physical operation of the device. With the aid of this model it is possible to relate the small-signal parameters of the hybrid-pi model to the device geometry parameters, a small number of technology parameters and the inversion coefficient. This makes it a design-friendly model.
SLiCAP uses the EKV model to relate the small-signal device parameters to the device geometry, the technology and the operating conditions.
Presentation
The presentation EKV model briefly introduces this model.
Downloads
“SLiCAP_python_mosEKVplots.zip”
Video
Study
Chapter 4.4.7, 4.5 (except 4.5.3)
Jupyter Notebook MOS characteristics
A virtual machine with a Jupyter notebook for displaying device characteristics of CMOS18 transistors. The characteristics are determined with LTspice and plotted with python.
Presentation
The presentation “Discover CMOS characteristics with jupyter notebook” discusses the installation and applicatipn of the Jupyter Notebook Tool.
Downloads
Install VirtualBox 6 on your computer
Download the Virtual Machine Structured_Electronic_Design_VM_0_3.ova
Install the virtual maching as described in VM_Startup.pdf
Download the manual
Video
EE4109 2020 2_4 Discover CMOS characteristics with jupyter notebook
Study
Chapter 4.4.1 - 4.4.6 (prerequisite knowledge BSc Electrical Engineering)
MOS EKV model
The inversion coefficient is an important measure for the operating conditions of a modern short channel MOS. Many important performance measures show a strong relation with the inversion coefficient.
Presentation
The presentation Application of the EKV model illustrates the use of the inversion coefficient as design parameter.
Video
EE4109 2020 2_5 Application of MOS EKV Model
Study
Chapter 4.4.7, 4.5 (except 4.5.3)
SLiCAP and LTspice files¶
Download Chapter4.zip
Poster¶
Download MOS modeling and design poster
Quiz¶
Design biased (Class A) NMOS CS stage with sufficiently large drive capability to drive the load of the active antenna.