"NMOS EKV versus BSIM model"

NMOS EKV versus BSIM model

Device geometry and operating point

The selected NMOS has the following geometry:

Channel length $L=10.0\,\mu$m,

Finger width $W=50.0\,\mu$m,

Number of fingers $M=27.0$,

This NMOS operates in weak inversion in the forward saturation region.

DC operating current $I_{DS}=1.07 \cdot 10^{-6}\,A$,

DC operating voltage $V_{DS}=0.5\,V$,

Input-referred noise voltage density spectrum

The figure below shows the input-referred noise voltage density spectrum in $\frac{V^2}{Hz}$.

The cut-off frequency $f_T$ equals $1.79 \cdot 10^{5} Hz.$

The corner frequency of the flicker noise $f_{\ell}$ equals $63.6$ Hz.

The ratio $\frac{f_T}{f_{\ell}}$ equals $2.82 \cdot 10^{3}$.

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Last project update: 2023-12-28 22:44:08