EKV versus BSIM model

Device geometry and operating point

The selected NMOS has the following geometry:

Channel length $L=1.0\,\mu$m,

Finger width $W=10.0\,\mu$m,

Number of fingers $M=42.0$,

This NMOS operates in weak inversion in the forward saturation region.

DC operating current $I_{DS}=-1.08 \cdot 10^{-6}\,A$,

DC operating voltage $V_{DS}=-0.5\,V$,

Input-referred noise voltage density spectrum

The figure below shows the input-referred noise voltage density spectrum in $\frac{V^2}{Hz}$.

The cut-off frequency $f_T$ equals $4.16 \cdot 10^{6} Hz.$

The corner frequency of the flicker noise $f_{\ell}$ equals $60.3$ Hz.

The ratio $\frac{f_T}{f_{\ell}}$ equals $6.91 \cdot 10^{4}$.