21-11-2023: MOS modeling¶
Lecture: EE4109-3
Location: Pulse Hall 4
Time: 15:45 - 17:30
Quiz¶
MOS EKV Model¶
All-regions nonlinear dynamic model
Active forward region small-signal and stationary noise model
MOS EKV model
IC manyfacturers often provide BSIM model parameters for CMOS devices. BSIM models are optimized for simulation speed and stability. Many parameters of these models have no direct relation to underlying physical mechanisms.
The EKV model shows a strong relation with the physical operation of the device. With the aid of this model it is possible to relate the small-signal parameters of the hybrid-pi model to the device geometry parameters, a small number of technology parameters and the inversion coefficient. This makes it a design-friendly model.
SLiCAP uses the EKV model to relate the small-signal device parameters to the device geometry, the technology and the operating conditions.
Presentation
The presentation EKV model briefly introduces this model.
Downloads
“SLiCAP_python_mosEKVplots.zip”
Video
Study
Chapter 4.4.7, 4.5 (except 4.5.3)
MOS EKV model
The inversion coefficient is an important measure for the operating conditions of a modern short channel MOS. Many important performance measures show a strong relation with the inversion coefficient.
Presentation
The presentation Application of the EKV model illustrates the use of the inversion coefficient as design parameter.
Video
EE4109 2020 2_5 Application of MOS EKV Model
Study
Chapter 4.4.7, 4.5 (except 4.5.3)
Group exercises¶
Please install the latest version of SLiCAP
Please install ngspice
Finish the exercises of the previous lecture
Run the SLiCAP example: MOS_EKV_BSIM.py
Change the device parameters W and/or L and the operating current IDS, discuss the expected changes in the small-signal parameters and verify your expectations with SLiCAP.
Do this for N and P devices